With the rapid progress in higher density semiconductor products, high purified graphite has grown in demand so as to reduce gas desorption of carbon surfaces as well as the amount of dust and impurities. Made by depositing a SiC layer on isotropic graphite using CVD process, PERMA KOTE™ is widely used in the semiconductor manufacturing industry.
The susceptors used in processes that form the epitaxial layer on semiconductor wafers, whether pancake type or barrel type, barrel, require an SiC coated graphite.
PERMA KOTE™ is a graphite product coated with high purified SiC, which has high heat and corrosion resistance.
Crystal structure |
β-SiC (Cubic system) Structure
|
Bulk density | 3.2 Mg/m3 |
Decomposition Temperature | 2700℃ or higher |
Hardness | 2800HK |
Electrical Resistivity | 0.2 Ω・m (through the fall-of-potential method) |
Flexural Strength | 170 MPa (through 3-point bending) |
Young's Modulus | 320 GPa (through the deflection method) |
* The figures above are extracted from other publications or are measurement examples, and are not guaranteed.
The standard thickness is 120 μm; however this can be modified within a range of 20 to 500 μm.
Name | Chemical formula | Concentration(%) | Temperature(℃) | Time(h) | Change in mass(g/m2) |
Hydrofluoric acid | HF | 47 | 80 | 144 | -1.0 |
Hydrochloric acid | HCl | 36 | Boiling point | 144 | 0 |
Sulfuric acid | H2SO4 | 97 | 110 | 144 | 0 |
Nitric acid | HNO3 | 61 | Boiling point | 144 | 0 |
Hydrofluoric acid + nitric acid | HF+HNO3 (1:1) | 100 | 80 | 288 | -1.0 |
Nitric acid + sulfuric acid | HNO3+H2SO4 (1:1) | 100 | 25 | 288 | -1.0 |
Sodium hydroxide | NaOH | 20 | 80 | 288 | 0 |
Phosphoric acid | H3PO4 | 100 | 100 | 192 | -1.0 |
Nitrohydrochloric acid | HCl+HNO3 (3:1) | 100 | 80 | 192 | 0 |
Reactant | Chemical Formula | 1200℃×3h | 1600℃×3h |
Aluminum | Al | ○ | △ |
Boron | B | ◎ | ◎ |
Cobalt | Co | △ | × |
Chromium | Cr | △ | × |
Copper | Cu | ○ | △ |
Iron | Fe | × | × |
Molybdenum | Mo | ◎ | ○ |
Nickel | Ni | ◎ | × |
Lead | Pb | △ | × |
Silicon | Si | ◎ | ○ |
Tin | Sn | ◎ | △ |
Tantalum | Ta | ◎ | ◎ |
Titanium | Ti | ◎ | ○ |
Vanadium | V | ◎ | × |
Tungsten | W | ◎ | ○ |
Alumina | Al2O3 | ◎ | × |
Boron oxide | B2O3 | ◎ | ◎ |
Chromium oxide (Ⅲ) | Cr2O3 | ◎ | × |
Iron oxide (Ⅲ) | Fe2O3 | × | × |
Magnesium oxide | MgO | ◎ | △ |
Manganese oxide (Ⅳ) | MnO2 | ◎ | × |
Lead oxide(Ⅱ) | PbO | ○ | △ |
Silicon oxide | SiO2 | ◎ | △ |
Titanium oxide (Ⅳ) | TiO2 | ◎ | ○ |
Vanadium oxide (Ⅴ) | V2O5 | ◎ | △ |
Zirconium oxide (Ⅳ) | ZrO2 | ◎ | ○ |
※ ◎...No reaction ○...Slight reaction
△...Reaction ×...Significant reaction
Element | Content |
B | 0.15 |
Na | 0.02 |
Al | 0.01 |
Cr | < 0.1 |
Fe | 0.02 |
Ni | < 0.01 |
*Measurement method: Glow Discharge Mass Spectrometry
*The figures above are measurement examples and are not to be guaranteed.
Before actually using one of our products, please refer to our catalogue and be sure to contact our sales department to consult on selecting the most appropriate grade.