PERMA KOTE™ is a product created by coating the surface of highly purified isotropic graphite with a fine layer of silicon carbide by means of a proprietary Toyo Tanso Chemical Vapor Deposition (CVD) process.
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SiC coated graphite PERMA-KOTE™
MOCVD Susceptor
Reflector(Single crystal silicon manufacturing equipment)
Pancake susceptor
The susceptors used in processes that form the epitaxial layer on semiconductor wafers, whether pancake type or barrel type, barrel, require an SiC coated graphite.
Barrel susceptor
PERMA KOTE™ is a graphite product coated with high purified SiC, which has high heat and corrosion resistance.
Feature
Features
- The silicon carbide layer has excellent oxidation resistance, corrosion resistance and chemical resistance.
- The silicon carbide layer is stable at high temperatures and is extremely hard.
- Prevents the parting and scattering of graphite particles, and the emission of gas and impurities from the graphite substrate.
- Both the graphite substrate and silicon carbide layer are of high purity.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- Material is designed so that cracks and delamination do not occur.
Application
- Susceptors for silicon epitaxial growth
- Single crystal silicon manufacturing equipment
- MOCVD susceptors
- Heaters
- Heat spreaders
- Oxidation resistance components
Coating Thickness
The standard thickness is 120 μm; however this can be modified within a range of 20 to 500 μm.
Property Data
Corrosion Resistance
You can scroll horizontally to see the table below.
| Name | Chemical formula | Concentration（％） | Temperature（℃) | Time（h） | Change in mass（g/m2） |
|---|---|---|---|---|---|
| Hydrofluoric acid | HF | 47 | 80 | 144 | -1.0 |
| Hydrochloric acid | HCｌ | 36 | Boiling point | 144 | 0 |
| Sulfuric acid | H2SO4 | 97 | 110 | 144 | 0 |
| Nitric acid | HNO3 | 61 | Boiling point | 144 | 0 |
| Hydrofluoric acid + nitric acid | HF+HNO3 (1:1） | 100 | 80 | 288 | -1.0 |
| Nitric acid + sulfuric acid | HNO3+H2SO4 (1:1） | 100 | 25 | 288 | -1.0 |
| Sodium hydroxide | NaOH | 20 | 80 | 288 | 0 |
| Phosphoric acid | H3PO4 | 100 | 100 | 192 | -1.0 |
| Nitrohydrochloric acid | HCｌ+HNO3 (3:1) | 100 | 80 | 192 | 0 |
Reactivity with various substances (in a vacuum)
| Reactant | Chemical Formula | 1200℃×3h | 1600℃×3h |
|---|---|---|---|
| Aluminum | Al | ○ | △ |
| Boron | B | ◎ | ◎ |
| Cobalt | Co | △ | × |
| Chromium | Cr | △ | × |
| Copper | Cu | ○ | △ |
| Iron | Fe | × | × |
| Molybdenum | Mo | ◎ | ○ |
| Nickel | Ni | ◎ | × |
| Lead | Pb | △ | × |
| Silicon | Si | ◎ | ○ |
| Tin | Sn | ◎ | △ |
| Tantalum | Ta | ◎ | ◎ |
| Titanium | Ti | ◎ | ○ |
| Vanadium | V | ◎ | × |
| Tungsten | W | ◎ | ○ |
| Alumina | Al2O3 | ◎ | × |
| Boron oxide | B2O3 | ◎ | ◎ |
| Chromium oxide (Ⅲ) | Cr2O3 | ◎ | × |
| Iron oxide (Ⅲ) | Fe2O3 | × | × |
| Magnesium oxide | MgO | ◎ | △ |
| Manganese oxide (Ⅳ) | MnO2 | ◎ | × |
| Lead oxide(Ⅱ) | PbO | ○ | △ |
| Silicon oxide | SiO2 | ◎ | △ |
| Titanium oxide (Ⅳ) | TiO2 | ◎ | ○ |
| Vanadium oxide (Ⅴ) | V2O5 | ◎ | △ |
| Zirconium oxide (Ⅳ) | ZrO2 | ◎ | ○ |
※ ◎...No reaction ○...Slight reaction
△...Reaction ×...Significant reaction
Layer Properties
| Crystal structure |
β-SiC (Cubic system) Structure
|
|---|---|
| Bulk density | 3.2 Mg/m3 |
| Decomposition Temperature | 2700℃ or higher |
| Hardness | 2800HK |
| Electrical Resistivity | 0.2 Ω・m （through the fall-of-potential method) |
| Flexural Strength | 170 MPa (through 3-point bending) |
| Young's Modulus | 320 GPa (through the deflection method) |
* The figures above are extracted from other publications or are measurement examples, and are not guaranteed.
Impurity analysis example mass ppm
| Element | Content |
|---|---|
| B | 0.15 |
| Na | 0.02 |
| Al | 0.01 |
| Cr | < 0.1 |
| Fe | 0.02 |
| Ni | < 0.01 |
*Measurement method: Glow Discharge Mass Spectrometry
*The figures above are measurement examples and are not to be guaranteed.
Before actually using one of our products, please refer to our catalogue and be sure to contact our sales department to consult on selecting the most appropriate grade.
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